features trenchfet power mosfets 175 c junction temperature high threshold voltage at high temperature applications automotive such as: ? abs ? high-side switch ? motor drives SUD50N04-09H vishay siliconix document number: 72669 s-42058?rev. d, 15-nov-04 www.vishay.com 1 n-channel 40-v (d-s), 175 c mosfet product summary v (br)dss (v) r ds(on) ( ) i d (a) c q g (typ) 40 0.009 @ v gs = 10 v 50 55 to-252 s gd top view drain connected to tab ordering information: SUD50N04-09H?e3 n-channel mosfet g d s absolute maximum ratings (t a = 25 c unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 40 v gate-source voltage v gs 20 v continuous drain current (t j = 175 c) t c = 25 c i d 50 c continuous drain current (t j = 175 c) t c = 100 c i d 48 c a pulsed drain current i dm 100 a avalanche current i ar 35 repetitive a valanche energy a l = 0.1 mh e ar 61.25 mj power dissipation t c = 25 c p d 83.3 w operating junction and storage temperature range t j , t stg ? 55 to 175 c thermal resistance ratings parameter symbol typical maximum unit jtitabit b t 10 sec r 18 22 junction-to-ambient b steady state r thja 40 50 c/w junction-to-case r thjc 1.5 1.8 c/w notes: a. duty cycle 1%. b. surface mounted on 1? fr4 board. c. based on maximum allowable junction temperature. package limitation current is 50 a.
SUD50N04-09H vishay siliconix www.vishay.com 2 document number: 72669 s-42058?rev. d, 15-nov-04 specifications (t j = 25 c unless otherwise noted) parameter symbol test condition min typ max unit static drain-source breakdown voltage v (br)dss v gs = 0 v, i d = 250 a 40 v gate threshold voltage v gs(th) v ds = v gs , i ds = 250 a 3.4 5 v gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na v ds = 40 v, v gs = 0 v 1 zero gate voltage drain current i dss v ds = 40 v, v gs = 0 v, t j = 125 c 50 a g dss v ds = 40 v, v gs = 0 v, t j = 175 c 150 on-state drain current a i d(on) v ds = 5 v, v gs = 10 v 50 a v gs = 10 v, i d = 20 a 0.0072 0.009 drain-source on-state resistance a r ds(on) v gs = 10 v, i d = 20 a, t j = 125 c 0.014 ds(on) v gs = 10 v, i d = 20 a, t j = 175 c 0.018 forward transconductance a g fs v ds = 15 v, i d = 15 a 20 57 s dynamic b input capacitance c iss 3700 output capacitance c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 340 pf reversen transfer capacitance c rss 175 total gate charge c q g 55 85 gate-source charge c q gs v ds = 20 v, v gs = 10 v, i d = 50 a 19 nc gate-drain charge c q gd ds , gs , d 13 gate resistance r g 1.3 turn-on delay time c t d(on) 12 20 rise time c t r v dd = 20 v, r l = 0.4 20 30 ns turn-off delay time c t d(off) v dd 20 v, r l 0.4 i d 50 a, v gen = 10 v, r g = 2.5 35 55 ns fall time c t f g 11 20 source-drain ciode ratings and characteristics (t c = 25 c) b continuous current i s 50 a pulsed current i sm 100 a forward voltage a v sd i f = 30 a, v gs = 0 v 0.90 1.50 v reverse recovery time t rr i f = 30 a, di/dt = 100 a/ s 30 45 ns notes: a. pulse test; pulse width 300 s, duty cycle 2%. b. guaranteed by design, not subject to production testing. c. independent of operating temperature. stresses beyond those listed under ?absolute maximum ratings? may cause permanent damage to the device. these are stress ratin gs only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability.
SUD50N04-09H vishay siliconix document number: 72669 s-42058?rev. d, 15-nov-04 www.vishay.com 3 typical characteristics (25 c unless noted) 0.000 0.002 0.004 0.006 0.008 0.010 0.012 0.014 0.016 0 20406080100 0 20 40 60 80 100 01234567 0 4 8 12 16 20 0 20406080100 0 1000 2000 3000 4000 5000 0 8 16 24 32 40 0 20 40 60 80 100 120 0 1020304050 0 20 40 60 80 100 0246810 output characteristics transfer characteristics capacitance gate charge transconductance on-resistance vs. drain current v ds ? drain-to-source voltage (v) ? drain current (a) i d v gs ? gate-to-source voltage (v) ? drain current (a) i d ? gate-to-source voltage (v) ? on-resistance ( q g ? total gate charge (nc) i d ? drain current (a) v ds ? drain-to-source voltage (v) c ? capacitance (pf) r ds(on) ? ) v gs v gs ? gate-to-source voltage (v) ? transconductance (s) g fs 25 c ? 55 c t c = 125 c v ds = 20 v i d = 50 a v gs = 10 thru 7 v v gs = 10 v c iss c oss t c = ? 55 c 25 c 125 c 6 v c rss
SUD50N04-09H vishay siliconix www.vishay.com 4 document number: 72669 s-42058?rev. d, 15-nov-04 typical characteristics (25 c unless noted) 0.5 0.8 1.1 1.4 1.7 2.0 ? 50 ? 25 0 25 50 75 100 125 150 175 on-resistance vs. junction t emperature source-drain diode forward voltage t j ? junction temperature ( c) v sd ? source-to-drain voltage (v) ? source current (a) i s 100 10 1 0.3 0.6 0.9 1.2 1.5 v gs = 10 v i d = 20 a t j = 25 c t j = 150 c r ds(on) ? on-resiistance (normalized) thermal ratings 0 10 20 30 40 50 60 70 80 0 25 50 75 100 125 150 175 t c = 25 c single pulse safe operating area ? drain current (a) i d 200 10 0.1 1 10 100 limited by r ds(on) 0.1 100 maximum avalanche and drain current vs. case temperature t c ? case temperature ( c) ? drain current (a) i d normalized thermal transient impedance, junction-to-ambient square wave pulse duration (sec) 2 1 0.1 0.01 10 ? 4 10 ? 3 10 ? 2 10 ? 1 10 normalized effective transient thermal impedance 1 k 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 1 limited by package 100 1 1 ms 10 ms 100 ms dc 10 s 100 s v ds ? drain-to-source voltage (v) *v gs minimum v gs at which r ds(on) is specified
SUD50N04-09H vishay siliconix document number: 72669 s-42058?rev. d, 15-nov-04 www.vishay.com 5 thermal ratings normalized thermal transient impedance, junction-to-case square wave pulse duration (sec) 2 1 0.1 0.01 10 ? 4 10 ? 3 10 ? 2 10 ? 1 10 normalized effective transient thermal impedance 1 00 0.2 0.1 duty cycle = 0.5 1 0.05 0.02 single pulse vishay siliconix maintains worldw ide manufacturing c apability. pr oducts may be manufactured at on e of several qualified locati ons. reliability data for silicon technology and package reliability repr esent a composite of all qualified locations. for re lated documents such as package/tape drawings, par t marking, and reliability data, see http://www.vishay.com/ppg?72669 .
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